Enphase chief product officer Raghu Belur about how gallium nitride technology is reshaping the company’s microinverter ...
New research points to safer devices with less loss at low voltages, but problems remain for high-voltage industrial ...
The "The Global RF GaN Market 2026-2036" has been added to ResearchAndMarkets.com's offering. The global Radio Frequency Gallium Nitride (RF GaN) market is experiencing robust expansion, driven by the ...
In Atomera's testing, MST enabled more than a 10x reduction in parasitic channel charge, reducing a key mechanism of RF power loss and supporting improved high-frequency GaN device performance.
A new publication from Opto-Electronic Science; DOI 10.29026/oes.2023.230005 overviews how GaN-based LED achieves high rate Wavelength division multiplexing visible light communication system with ...
A new technology reduces parasitic channel losses in GaN-on-silicon while boosting linearity and lowering power consumption.
A study revealed that a simple thermal reaction of gallium nitride with metallic magnesium results in the formation of a distinctive superlattice structure. This represents the first time researchers ...
CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), a leading innovator in gallium nitride (GaN) power devices, has successfully closed a $32 million Series C funding round. The ...
Thermal treating of metallic magneiusm on gallium nitride semiconductor results in the formation of a distinctive superlattice structure. Magnesium, nitrogen, gallium atoms are shown in orange, blue, ...
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